姓名 罗向东 职称 教授
个人简介
罗向东，男，博士，教授，主要从事半导体器件与应用研究。1998年本科毕业于北京科技大学（金属物理专业），2003年研究生毕业于中国科学院半导体研究所超晶格国家重点实验室（理学博士）。并多次去瑞典，韩国，香港等地进行学术交流与合作。先后主持3项国家自然科学基金项目，3项省部级科研项目，发表SCI/EI学术论文70余篇。所领导团队目前正主要开展高迁移率器件相关的国家自然科学基金项目研究以及弱信号检测系统设计。
专业研究领域
半导体器件与系统、微弱信号检测与电路
学术论文
主要科研成果：
[1] Zhang J W, Zhou Y X, Zhao J Q, Niu G S, and Luo X D*. Joint Error Estimation and Calibration Method of Memory Nonlinear Mismatch for a Four-Channel 16-Bit TIADC System[J]. Sensors, 2022, 22: 2427
[2] Niu G S, Liu C, Zhang J W, Li X T, Luo X D*. Research Progress of Time-interleaved Analog-to-Digital Converters[J]. Integration, the VLSI journal, 2021, 81: 313-321.
[3]罗向东，刘聪. 由3路继电器控制4路信号通断的逻辑系统及控制方法. ，专利号：ZL201910302013.7，授权公告：2020年 4 月07日
[4] Zhang C, Li T, Wen W,Luo X D**, Zhao L J*. Highly enhanced photoluminescence from perovskite-semiconductor composites formed by CsPbBr3 nanocrystals embedded in ZnSe microsphere[J]. Journal of Luminescence, 2020, 221: 117081.
[5] Sha W, Zhang J C, Tan S X, LUO X D*. III-nitride piezotronic/piezo-phototronic materials anddevices[J]. J. Phys. D, 2019, 52(21):213003
[6] Liu Xue-Lu, Wu Jiang-Bin, Luo Xiang-Dong*, Tan Ping-Heng**. Dual-modulated photoreflectance spectra of semi-insulating GaAs[J]. Acta. Phys. Sin. 2017, 66(14): 147801
[7] Xiaowen Yuan, Qi Wang, Liaoxin Sun,Senlin Li, C. Q. Chen, X. D. Luo*, Bo Zhang**. Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMB[J]. Appl. Phys. A, 2015, 119(1):193-199
[8] Peisheng Liu, Xiaolong Zhang, Ling Sun, Shanshan Dai, Chenhui Yu, Xiangdong Luo*. Optimization of Rear Local Al-Contacts on High Efficiency Commercial PERC Solar Cells with Dot and Line Openings[J]. Journal of Nanomaterials, 2014, 2014: 515969, 5 pages
[9] WANG Qi, ZHU Xiao-Feng, YUAN Xiao-Wen, CHEN Chang-Qing*, LUO Xiang-Dong**, ZHANG Bo*. A Sub-Wavelength Near-Field Metal Detection by an On-Chip Spintronic Technique[J]. CHIN. PHYS. LETT.2013, 30 (12) : 128501
[10] Shanshan.dai, Gaojie.zhang, Xiangdong.luo*, Jingxiao.Wang, Wenjun.Chen, and Yue Ma. The Effect of Al-BSF on Seff and Rb in Industrialized Monosilicon Solar Cells[J]. Advanced Materials Research, 2012, 472-475 (2012): 1846-1850
[11]谭平恒，徐仲英，罗向东，葛惟昆，探测半导体能带结构高阶临界点的新方法，专利号：ZL200510130769.6，授权公告：2009 年 4 月 22 日，授权公告号：CN 100480683 C
[12]罗向东, 刘培生, 徐炜炜, 谭平恒, 蔡伟平，新型掺氮半导体与复杂纳米结构材料的研究, 2011 年南通市科技进步三等奖
[13]Xiangdong Luo, Peisheng Liu, Nguyen Tam Nguyen Truong, Umme Farva, and Chinho Park,Photoluminescence Blue-Shift of CdSe Nanoparticles Caused by Exchange of Surface Capping Layer. J.Phys. Chem. C, 2011, 115: 20817–20823
[14]Xiang Dong Luo, Umme Farva, Nguyen Tam Nguyen Truong, Kyung Soo Son, PeiSheng Liu, Chihaya Adachi, Chinho Park, Synthesis and characterization of CdSe nanocrystals capped with TOPO and pyridine J. Crystal Growth, 2012, 339: 22–30
[15]X. D. Luo et al. Red organic light-emitting devices based on a pentacene derivative. Current Applied Physics. 2011, 11(3):844-848
[16]X. D. Luo et al. Selectively-excited Photoluminescence in nc-Si:Er. Transactions of NUAA, 2008, 25(4)：318-323
[17] P. H. Tan, X. D. Luo, Z. Y. Xu, et al, Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAsN alloys: A microphotoluminescence study. Phys. Rev. B, 2006, 73, 205205
[18] P. H. Tan, Z. Y. Xu,X. D. Luo et al. Resonant Raman scattering with the E+ band in a dilute GaAs1-xNx alloy (x=0.1%). Appl. Phys. Lett., 2006, 89, 101912
[19] P. H. Tan, Z. Y. Xu, X. D. Luo et al. Unusual carrier thermalization in a dilute GaAs1-xNx alloy, Appl. Phys. Lett., 2007, 90, 061905
[20]X. D. Luo, et al. Low energy oscillatory phenomena in photoreflectance and photo-modulationreflectance spectra of GaMnAs films grown by low temperature molecular-beam epitaxy, Acta Physica Sinica, 2008, 57(8): 5277-5283
[21] X. D. Luo, J. S. Huang, Z. Y. Xu, C. L. Yang, J. Liu, W.K. Ge, Y. Zhang,A. Mascarenhas, H. P. Xin, and C. W. Tu, Alloy States in Dilute GaAs1-xNx Alloy (x<1%), Appl. Phys. Lett., 2003, 82: 1697-1699.
[22]X. D. Luo, P. H. Tan, Z. Y. Xu, W. K. Ge, Selectively Excited Photoluminescence of GaNAs/GaAs Single Quantum Wells, J. Appl. Phys., 2003, 94: 4863-4865.
[23]X. D. Luo, C. Y. Hu, Z. Y. Xu, H. L. Luo, Y. Q. Wang, J. N. Wang, and W. K. Ge, Selectively Excited Photoluminescence of GaAs1-xSbx/GaAs Single Quantum Wells. Appl. Phys. Lett.,2002, 81: 3795-3797.
[24]X. D. Luo, Z.Y. Xu, B. Q. Sun, W. K. Ge,Z. Pan, L. H.Li, and Y. W.Lin, Photoluminescence Properties of GaN0.015As0.985/GaAs Single Quantum Wells under Short Pulse Excitation. Appl. Phys. Lett., 2001, 79: 958-960. Colletcted by “Lasers, Optics, and Optoelectronics”, AIP.
[25]X. D. Luo, Z. Y. Xu, Y. Q. Wang, W. X. Wang, J. N. Wang, and W. K. Ge. Abnormal Effect of Growth Interruption on GaSb Quantum Dots Formation Grown by Molecular Beam Epitaxy. J. Crystal. Growth., 2003, 247: 99-104.
[26]X. D. Luo, C. L. Yang, J. S. Huang, Z. Y. Xu, et al, Optcial Study of Electronic States in GaAsN, COMMAD-2002, Sydney, Dec. 2002.
[27]X. D. Luo, Z. Y. Xu, B. Q. Sun, Z. Pan, L. H. Li, Y. W. Lin and W. K. Ge, Optical Transitions inGaAsN/GaAs Single Quantum Wells. Proc. of Int. Workshop on Nitride Semiconductors (Tokyo, Japan), 2000, IPAP Conf. Series 1, 677-678.
[28]LUO Xiang-Dong, XU Zhong-Ying, PAN Zhong, LI Lian-He, LIN Yao-Wang, GE Wei-Kun, Optical Properties and Band Lineup in GaNxAs1-x/GaAs Single Quantum Wells. J. Infrared Millin. Waves, 2001, 20: 25-28
[29]Luo Xiang-Dong, Bian Li-feng, Xu Zhong-Ying, Luo Hai-lin, Wang Yu-Qi, Wang Jiang-Nong, and Ge Wei-Kun. Study of Optical Properties in GaAs1-xSbx/GaAs Single Quantum Wells. Acta Physica Sinica, 2003, 52(7): 1761-1765
[30]X. D. Luo, Z. Y. Xu, W. K. Ge, Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells. Chinese J. of Luminescence, 2002, 23, 109-112
[31]X. D. Luo, Z. Y. Xu, P. H. Tan, et al. Optical properties and exciton localization in GaNas/GaAs, J. Infrared and Millimeter Waves, 2005, 24(3): 185-188
[32]X.D.Luo,B.H.Sun,Z.Y.Xu,OpticalpropertiesofalloystatesinGaNxAs1-x(x<0.01), Acta Physica Sinica, 2005, 54(5): 2385-2388
主要科研项目
“深紫外时间和空间分辨压力光谱系统研制（61927806）”-国家自然科学基金仪器重点项目，2020.01-2025.12，792万（北京大学、4166am金莎、中科院半导体研究所、上海大学）（4166am金莎负责人：罗向东）
讲授课程
半导体物理、物理光学、MEMS技术
指导研究生情况
2009年至今共指导硕士研究生30余位，联合指导博士2名。员工毕业后发展良好。两名博士在中芯国际等国内知名企业就业。硕士研究生主要就业于长三角半导体于芯片企业。